InGaAs/InGaAsP integrated tunable detector grown by chemical beam epitaxy
نویسندگان
چکیده
By controlling the thickness of the grating depth with chemical beam epitaxy (CBE) growth time, we report in this letter the design and performance of an integrated tunable detector. A carefully designed tunable active filter, which allows only one below threshold Fabry-Perot mode for operation, is integrated with a waveguide detector. The full tuning range of this kind of tunable device can now be utilized for system applications.
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